Ta2 N1

semiconductor

· Ta2 N1

Tantalum nitride (Ta₂N₁) is a refractory ceramic compound belonging to the transition metal nitride family, characterized by high hardness and thermal stability. It is employed in semiconductor device applications, thin-film barriers for copper interconnects in integrated circuits, and wear-resistant coatings, where its chemical inertness and mechanical strength provide advantages over conventional diffusion barriers and surface treatments. The material is of particular interest in advanced microelectronics and nanotechnology research for its potential to enable smaller feature sizes and improved device reliability.

semiconductor interconnectsthin-film barrierswear-resistant coatingsrefractory applicationsintegrated circuit fabricationdiffusion barriers

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	40,177.1	ksi	—
Shear Modulus(G)	17,283.7	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00900	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.8880	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta2 N1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control