Ta2 Mn1 Os1

semiconductor

· Ta2 Mn1 Os1

Ta2Mn1Os1 is an intermetallic compound combining tantalum, manganese, and osmium—a research-phase material in the refractory metal family with semiconductor characteristics. This ternary system is primarily of academic and exploratory interest, investigated for potential applications requiring extreme thermal stability and electrical properties that differ from conventional semiconductors; industrial adoption remains limited, but such materials are studied for high-temperature electronics, thermoelectric devices, and specialized catalytic applications where refractory elements offer advantages over conventional semiconductor alternatives.

high-temperature electronics (research)thermoelectric materials (exploratory)refractory alloyscatalysis applications (potential)extreme environment sensing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	263.7	GPa	—
Shear Modulus(G)	80.06	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00220	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2840	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta2 Mn1 Os1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control