Ta2 In6 O14

semiconductor

· Ta2 In6 O14

Ta₂In₆O₁₄ is a mixed-metal oxide semiconductor compound combining tantalum and indium in a layered perovskite-related crystal structure. This material is primarily investigated in research contexts for optoelectronic and photocatalytic applications, where the wide bandgap and layered structure offer potential advantages in UV detection, photocatalysis, and high-frequency electronic devices. While not yet commercialized at scale, compounds in this tantalum-indium oxide family are of interest as alternatives to conventional wide-bandgap semiconductors, particularly where high thermal stability and radiation hardness are needed.

photocatalytic thin filmsUV photodetectorshigh-frequency semiconductorsresearch-phase optoelectronicsradiation-hard electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.223	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.065	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta2 In6 O14

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control