Ta2 In2 O8

semiconductor

· Ta2 In2 O8

Ta2In2O8 is a mixed-metal oxide semiconductor compound combining tantalum and indium oxides, belonging to the class of complex oxide semiconductors with potential applications in electronic and photonic devices. This material is primarily of research interest rather than established commercial use, with investigation focused on its electrical conductivity, optical properties, and thermal stability for next-generation semiconductor applications. The tantalum-indium oxide system is explored as an alternative to conventional semiconductors in niche applications where the combined properties of both metal oxides offer advantages in specific device architectures or operating environments.

experimental semiconductorsoxide electronics researchphotonic device developmentthin-film transistorshigh-temperature electronicsmaterials research phase

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	176.3	GPa	—
Shear Modulus(G)	72.72	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.676	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.540	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta2 In2 O8

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control