Ta₂Ga₂O₈ is an oxide semiconductor compound combining tantalum and gallium, representing a mixed-metal oxide in the family of wide-bandgap semiconductors. This material is primarily of research and developmental interest for next-generation electronic and photonic applications, where its unique combination of constituent elements offers potential advantages in high-temperature stability, radiation hardness, and optical properties compared to single-component semiconductors like GaN or Ga₂O₃. Engineers evaluating this compound should note it remains largely experimental; its practical adoption depends on demonstration of scalable synthesis routes and performance validation in target device architectures.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 29,036.6 | ksi | — | ||
Shear Modulus(G) | 11,797.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.441 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.598 | eV/atom | — |