Ta10 Ge6

semiconductor

· Ta10 Ge6

Ta10Ge6 is an intermetallic compound combining tantalum and germanium in a fixed stoichiometric ratio, belonging to the family of refractory metal-semiconductor compounds. This material is primarily of research interest for high-temperature electronic and structural applications, with potential use in advanced semiconductor devices, thermoelectric systems, and extreme-environment components where the combined properties of a refractory metal and semiconductor element offer advantages over conventional alternatives.

high-temperature electronicsthermoelectric devicesresearch semiconductorsrefractory compound researchextreme-environment componentsmaterials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01340	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2230	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta10 Ge6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control