Ta1 Tl1 Pt1
semiconductorTa1Tl1Pt1 is an experimental ternary intermetallic semiconductor compound combining tantalum, thallium, and platinum. This material represents a research-phase composition within the family of precious metal intermetallics, designed to explore novel electronic and structural properties that may arise from the combination of a refractory metal (Ta), a post-transition metal (Tl), and a noble metal (Pt). While not yet established in mainstream engineering applications, such ternary systems are investigated for potential use in specialized electronics, thermoelectric devices, or high-temperature semiconductor applications where the unique combination of chemical properties could offer advantages over binary or single-element alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 22,785.4 | ksi | — | ||
Shear Modulus(G) | 7,414.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.070 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.03000 | eV/atom | — |