Ta1 Ti1 Os2

semiconductor

· Ta1 Ti1 Os2

Ta1Ti1Os2 is an experimental intermetallic compound combining tantalum, titanium, and osmium in a 1:1:2 ratio, classified as a semiconductor material. This compound represents research into high-entropy or complex intermetallic systems that combine refractory metals (Ta, Os) with titanium to explore novel electronic and structural properties. As a research-stage material, Ta1Ti1Os2 is not yet established in mainstream industrial applications, but intermetallics of this type are investigated for potential use in extreme environments where electronic function and mechanical integrity must coexist at high temperatures.

experimental semiconductor researchhigh-temperature electronicsrefractory intermetallic compoundsadvanced materials developmentharsh-environment applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	267.0	GPa	—
Shear Modulus(G)	91.50	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00440	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5270	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta1 Ti1 Os2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control