Tantalum diselenide (Ta₁Se₂) is a layered transition metal dichalcogenide semiconductor with a structure similar to naturally occurring minerals in the TMD family. This material is primarily of research and development interest for emerging optoelectronic and nanoelectronic applications, including photodetectors, field-effect transistors, and thermoelectric devices, where its layer-dependent properties and tunable electronic characteristics offer potential advantages over conventional semiconductors and established alternatives like silicon or gallium arsenide.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,623.4 | ksi | — | ||
Shear Modulus(G) | 4,812.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00920 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8050 | eV/atom | — |