Ta1 S2

semiconductor

· Ta1 S2

Ta1S2 is a layered transition metal dichalcogenide semiconductor composed of tantalum and sulfur, belonging to the same materials family as MoS2 and WS2. This compound is primarily of research interest for its potential in nanoelectronics, optoelectronics, and energy storage applications, where its layered structure enables tunable band gap, strong light-matter interactions, and favorable charge transport properties when exfoliated or grown in thin-film forms. Engineers and researchers consider Ta1S2 as an alternative to more established dichalcogenides for next-generation devices where tantalum's atomic characteristics may offer performance advantages in specific electronic or catalytic configurations.

2D semiconductor researchThin-film transistorsPhotonic/optoelectronic devicesHydrogen evolution catalysisBattery/energy storage electrodesIntegrated circuit prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	54.97	GPa	—
Shear Modulus(G)	39.66	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.130	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta1 S2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control