Ta1 S1
semiconductorTa1S1 is a tantalum sulfide compound semiconductor, likely a layered transition metal dichalcogenide or related phase with potential applications in electronic and optoelectronic devices. This material belongs to a research-active family of 2D and quasi-2D semiconductors being explored for next-generation electronics, photonics, and energy conversion due to their tunable band gaps and unique crystal structures. Compared to conventional semiconductors like silicon or gallium arsenide, tantalum sulfides offer potential advantages in flexible electronics, low-dimensional device architectures, and integration into van der Waals heterostructures, though commercial deployment remains limited and material characterization is ongoing in academic and industrial research settings.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |