Ta₁In₁Se₂ is a ternary layered semiconductor compound composed of tantalum, indium, and selenium. This material belongs to the family of two-dimensional (2D) transition metal chalcogenides and is primarily investigated in research contexts for its potential in electronic and optoelectronic applications. The layered structure and tunable band gap make it a candidate for next-generation nanoelectronics, photovoltaics, and sensing devices where van der Waals heterostructures can be engineered.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00990 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6620 | eV/atom | — |