Ta1 In1 S2

semiconductor

· Ta1 In1 S2

Ta₁In₁S₂ is a layered ternary chalcogenide semiconductor compound combining tantalum, indium, and sulfur in a 1:1:2 stoichiometric ratio. This material belongs to the family of transition metal dichalcogenides and related ternary semiconductors, currently pursued in research contexts for its potential in optoelectronic and electronic device applications. The layered crystal structure and tunable band gap make it a candidate for next-generation thin-film devices, photovoltaics, and low-dimensional material research, though commercial applications remain limited pending further development.

research semiconductorsthin-film electronicsoptoelectronic devicesphotovoltaic materialslow-dimensional materialsnext-generation computing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01490	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.9600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta1 In1 S2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control