Ta1 Ga1 Ru2

semiconductor

· Ta1 Ga1 Ru2

Ta1Ga1Ru2 is an intermetallic compound combining tantalum, gallium, and ruthenium in a defined stoichiometric ratio, belonging to the ternary intermetallic semiconductor family. This is a research-phase material studied for its potential electronic and structural properties; intermetallics of this composition are of academic interest for applications requiring high hardness, chemical stability, and semiconductor behavior in extreme environments. The tantalum-ruthenium base provides corrosion resistance and refractory character, while the gallium incorporation introduces semiconductor functionality, making this material a candidate for high-temperature electronics or specialized catalytic applications where conventional semiconductors fail.

High-temperature semiconductor researchIntermetallic compoundsRefractory materialsExperimental electronic devicesCorrosion-resistant coatingsCatalyst research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	243.6	GPa	—
Shear Modulus(G)	113.6	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1032	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5380	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta1 Ga1 Ru2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control