Ta1 Ga1 Ru2
semiconductorTa1Ga1Ru2 is an intermetallic compound combining tantalum, gallium, and ruthenium in a defined stoichiometric ratio, belonging to the ternary intermetallic semiconductor family. This is a research-phase material studied for its potential electronic and structural properties; intermetallics of this composition are of academic interest for applications requiring high hardness, chemical stability, and semiconductor behavior in extreme environments. The tantalum-ruthenium base provides corrosion resistance and refractory character, while the gallium incorporation introduces semiconductor functionality, making this material a candidate for high-temperature electronics or specialized catalytic applications where conventional semiconductors fail.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |