Ta1Ga1Pt1 is an experimental ternary intermetallic compound combining tantalum, gallium, and platinum in equiatomic proportions, classified as a semiconductor. This material represents research into high-performance intermetallics that leverage the refractory properties of tantalum, the semiconductor characteristics of gallium, and the chemical stability of platinum. Such ternary systems are of interest for extreme-environment electronics and high-temperature device applications, though this specific composition remains largely in the research phase with limited commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21,359.3 | ksi | — | ||
Shear Modulus(G) | -1,256 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01580 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.07100 | eV/atom | — |