Ta1 Bi4 Cl1 O8

semiconductor

· Ta1 Bi4 Cl1 O8

Ta₁Bi₄Cl₁O₈ is a mixed-metal oxide-halide semiconductor compound combining tantalum and bismuth with chlorine and oxygen in its crystal structure. This is a research-phase material exploring the semiconductor properties of complex ternary/quaternary oxide systems; compounds in this family are investigated for potential applications in photocatalysis, optoelectronics, and energy conversion where the mixed-metal composition can tune bandgap and carrier transport properties. The incorporation of both transition metals (Ta) and post-transition metals (Bi) along with halide anions represents an emerging strategy to engineer semiconductors with properties distinct from conventional binary oxides or perovskites.

photocatalysis researchvisible-light photocatalystsexperimental semiconductorsoptoelectronic materials developmentbismuth oxide systemstantalum compound research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.268	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.793	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta1 Bi4 Cl1 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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