Ta₁Al₁O₄ is a tantalum aluminum oxide ceramic compound that functions as a semiconductor, combining the high-temperature stability and chemical inertness of tantalum oxides with aluminum's lightweight properties. This material is primarily of research and developmental interest for advanced electronic and photonic applications where high refractive index, thermal stability, and electrical control are needed. Unlike conventional semiconductors, tantalum aluminum oxides are explored for integrated optics, thin-film capacitors, and next-generation device substrates where the mixed-metal oxide composition offers tunable properties not achievable with single-component oxides.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 33,561.7 | ksi | — | ||
Shear Modulus(G) | 20,343 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.879 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.131 | eV/atom | — |