SrSiO₂S is an oxysulfide semiconductor compound combining strontium, silicon, oxygen, and sulfur. This material belongs to the emerging class of mixed-anion semiconductors and is primarily studied for photoluminescence and optoelectronic applications where tunable bandgap properties are valuable. The oxysulfide structure makes it a research-phase material with potential advantages over traditional oxides and sulfides in phosphor technology, photocatalysis, and wide-bandgap semiconductor devices, though industrial adoption remains limited compared to more established alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.200 | eV | — | ||
Magnetic Moment(μB) | -0.00000215 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.7800 | eV/atom | — |