SrHfOFN is an experimental oxynitride semiconductor compound combining strontium, hafnium, oxygen, and nitrogen elements. This material belongs to the broader family of transition metal oxynitrides, which are being investigated for next-generation optoelectronic and photocatalytic applications where conventional semiconductors face limitations. The incorporation of nitrogen into hafnium oxide lattices can modify bandgap energy and electronic properties compared to pure oxide ceramics, making it a research-phase candidate for applications requiring tuned optical absorption or enhanced carrier mobility in harsh environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.500 | eV | — | ||
Magnetic Moment(μB) | 2.805e-15 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.5600 | eV/atom | — |