SrGaO2F is an experimental oxyhalide semiconductor compound combining strontium, gallium, oxygen, and fluorine. While not yet commercialized at scale, this material belongs to the family of wide-bandgap semiconductors and represents an emerging research direction in compound semiconductors that could enable next-generation optoelectronic and electronic devices. The fluorine incorporation in an oxide host is a notable structural feature that could tune electronic properties compared to conventional oxide or halide semiconductors, making it of interest for applications requiring specific bandgaps or carrier dynamics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.100 | eV | — | ||
Magnetic Moment(μB) | -1.868e-15 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1800 | eV/atom | — |