Sr6 Ga6 N10

semiconductor

· Sr6 Ga6 N10

Sr6Ga6N10 is an experimental wide-bandgap semiconductor compound combining strontium, gallium, and nitrogen in a complex crystal structure. This material belongs to the family of nitride-based semiconductors and is primarily of research interest for next-generation optoelectronic and high-power electronic applications where conventional III-nitrides (such as GaN) may have limitations. The compound's potential lies in enabling novel device architectures for UV emitters, power electronics, and extreme-environment applications, though it remains largely in the development phase with limited commercial deployment compared to more established gallium nitride alternatives.

UV optoelectronics researchwide-bandgap semiconductorshigh-power electronics developmentextreme-environment devicesadvanced nitride compoundsnext-generation LEDs and lasers

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.596	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7440	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Sr6 Ga6 N10

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control