Sr₄Ga₈As₈ is a quaternary semiconductor compound belonging to the III–V and II–VI semiconductor families, combining strontium (alkaline earth), gallium (Group III), and arsenic (Group V) elements. This material is primarily of research interest for optoelectronic and photovoltaic applications, as the strontium substitution modifies the bandgap and lattice parameters compared to binary GaAs, potentially enabling tunable electronic properties for specialized detector or light-emitting device architectures. The compound represents an experimental composition with potential in wide-bandgap or lattice-engineered device platforms, though industrial deployment remains limited compared to mature GaAs or InGaAs alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2591 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6910 | eV/atom | — |