Sr₂Tc₂N₆ is an experimental transition metal nitride semiconductor compound combining strontium and technetium in a layered crystal structure. This material belongs to the family of metal-rich ternary nitrides, which are currently of significant research interest for potential high-temperature and high-pressure semiconductor applications. While not yet commercially established, such technetium nitride compounds are being investigated for advanced electronic and photonic devices where conventional semiconductors reach performance limits, and the strontium dopant may influence band structure and carrier mobility in ways distinct from binary nitride alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00510 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4930 | eV/atom | — |