Sr₂Hf₂O₆ is a pyrochlore-structured ceramic oxide semiconductor composed of strontium, hafnium, and oxygen. This is a research-phase material being investigated for its electronic and thermal properties in advanced applications, particularly valued for its structural stability and potential as a dielectric or radiation-tolerant ceramic in extreme-environment systems. Unlike conventional semiconductors, this ceramic compound combines ionic bonding with potential band-gap properties, making it relevant to engineers exploring alternatives to standard oxides in high-temperature or radiation-heavy environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 23,829.7 | ksi | — | ||
Shear Modulus(G) | 15,133.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.827 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.658 | eV/atom | — |