SrGaSnH is an experimental ternary hydride semiconductor compound combining strontium, gallium, and tin with hydrogen. This material belongs to the emerging class of metal hydride semiconductors being investigated for next-generation optoelectronic and photovoltaic applications, where the tunable band gap and potential for efficient charge carrier transport offer advantages over conventional semiconductors. Research into this compound family is motivated by the possibility of achieving improved thermal stability, lower processing temperatures, and alternative electronic properties compared to traditional III-V or perovskite semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 43.74 | GPa | — | ||
Shear Modulus(G) | 33.19 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04050 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5140 | eV/atom | — |