SnZrOFN is an experimental oxynitride semiconductor compound combining tin, zirconium, oxygen, and nitrogen phases. This material belongs to the emerging family of mixed-anion semiconductors being investigated for photocatalysis and optoelectronic applications where conventional oxides or nitrides have bandgap limitations. The oxynitride composition offers tunable electronic properties and potential for visible-light-driven processes, though it remains largely in research and development rather than established industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8000 | eV | — | ||
Magnetic Moment(μB) | -2.229e-16 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.5200 | eV/atom | — |