SnTaO2N is an experimental oxynitride semiconductor compound combining tin, tantalum, oxygen, and nitrogen phases. This material is primarily under investigation in photocatalysis and energy conversion research, where its modified bandgap and mixed-anion chemistry offer potential advantages over single-oxide semiconductors for water splitting and pollutant degradation under visible light. Engineers and researchers consider oxynitrides like SnTaO2N when conventional oxide photocatalysts (TiO2, WO3) lack sufficient visible-light response, though practical deployment remains limited to laboratory-scale demonstrations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.200 | eV | — | ||
Magnetic Moment(μB) | -0.000128 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1400 | eV/atom | — |