Tin monosulfide (SnS) is a layered IV-VI semiconductor compound with an orthorhombic crystal structure, belonging to the family of metal chalcogenides. While primarily in the research and development phase, SnS is investigated as a promising material for optoelectronic and photovoltaic applications due to its tunable bandgap, earth-abundant composition, and potential for low-cost, large-scale manufacturing compared to conventional semiconductors. Its layered structure and anisotropic properties make it attractive for emerging thin-film technologies, though industrial deployment remains limited.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,558.5 | ksi | DFT · OptB88vdW | ||
Exfoliation Energy(Eexf) | 128.9 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.05000 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,261.1 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1802 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.420 | eV | Measured | ||
| ↳ | 1.018 | eV | DFT · OptB88vdW | ||
| ↳ | 1.474 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr) | 762.6 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 14.26 | - | DFT · OptB88vdW | ||
| ↳ | 9.854 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.2867 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 1.403 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.5442 | C/m² | DFT · OptB88vdW | ||
| ↳ | 1.821 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.00374 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00278 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -185.9 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 262.5 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 32.68 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01700 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -0.5426 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -0.5592 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data