Tin disulfide (SnS₂) is a layered two-dimensional semiconductor compound belonging to the transition metal dichalcogenide family, characterized by weak van der Waals interlayer bonding. Currently pursued primarily in research and emerging technology contexts, SnS₂ shows promise for optoelectronic devices, energy storage, and sensing applications where its layer structure enables mechanical exfoliation and integration into next-generation nanodevice architectures. Engineers consider this material for projects requiring tunable bandgap semiconductors, particularly in flexible electronics, photodetectors, and battery electrode materials where the ability to produce ultrathin films offers performance advantages over conventional bulk semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,232.3 | ksi | — | ||
Exfoliation Energy(Eexf) | 83.28 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 3,814.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1559 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.430 | eV | — | ||
| ↳ | 1.224 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 12.48 | - | — | ||
| ↳ | 20.24 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -267.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.5307 | eV/atom | — | ||
| ↳ | -0.4399 | eV/atom | — |