Tin disulfide (SnS₂) is a layered two-dimensional semiconductor compound belonging to the transition metal dichalcogenide family, characterized by weak van der Waals interlayer bonding. Currently pursued primarily in research and emerging technology contexts, SnS₂ shows promise for optoelectronic devices, energy storage, and sensing applications where its layer structure enables mechanical exfoliation and integration into next-generation nanodevice architectures. Engineers consider this material for projects requiring tunable bandgap semiconductors, particularly in flexible electronics, photodetectors, and battery electrode materials where the ability to produce ultrathin films offers performance advantages over conventional bulk semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 42.97 | GPa | DFT · OptB88vdW | ||
Exfoliation Energy(Eexf) | 83.28 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2500 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 26.30 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.315 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 2.430 | eV | Measured | ||
| ↳ | 1.224 | eV | DFT · OptB88vdW | ||
| ↳ | 2.063 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 20.24 | - | DFT · OptB88vdW | ||
| ↳ | 12.48 | - | DFT · PBE | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 9.304 | - | DFT · OptB88vdW | ||
| ↳ | 7.170 | - | DFT · TBmBJ | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00359 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00218 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -267.2 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 379.8 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 21.56 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -0.4399 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -0.5307 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data