SnNbO2N

semiconductor

· SnNbO2N

SnNbO2N is a mixed-metal oxynitride semiconductor combining tin and niobium, belonging to the family of transition metal oxynitrides. This is a research-stage material being investigated for photocatalytic and optoelectronic applications due to its tunable bandgap and nitrogen-doping effects that enhance visible-light absorption compared to conventional oxides. The material shows promise in environmental remediation and energy conversion contexts, where the oxynitride chemistry offers advantages over pure oxides by enabling operation under visible rather than only UV light.

Photocatalytic water treatmentVisible-light photocatalysisSolar energy conversionEnvironmental remediationResearch semiconductorsThin-film optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5000	eV	—
Magnetic Moment(μB)	-0.0000691	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.1800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SnNbO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control