SnInO2F

semiconductor

· SnInO2F

SnInO2F is an experimental fluorine-doped mixed-metal oxide semiconductor combining tin, indium, oxygen, and fluorine. This material belongs to the family of transparent conducting oxides (TCOs) and is primarily investigated in research settings for optoelectronic applications where both electrical conductivity and optical transparency are required. Its fluorine doping is designed to enhance carrier concentration compared to undoped indium-tin oxide analogs, making it of interest for next-generation display technologies, photovoltaic devices, and transparent electrode applications where cost reduction or performance improvement over conventional ITO is sought.

transparent electrodesthin-film photovoltaicsdisplay technologiesoptoelectronic devicesresearch-phase semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.200	eV	—
Magnetic Moment(μB)	3.280e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SnInO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control