SnHgO3 is an experimental ternary oxide semiconductor composed of tin, mercury, and oxygen, representing a compound from the mixed-metal oxide family with potential electronic applications. This material exists primarily in research contexts rather than established industrial production, and belongs to a class of materials being investigated for semiconductor, photocatalytic, or sensing applications where tin and mercury oxides might offer synergistic properties. The specific combination is notable for researchers exploring alternative electronic materials, though practical deployment remains limited pending further development of synthesis methods and performance validation against conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 153.3 | GPa | — | ||
Poisson's Ratio(ν) | 0.3400 | - | — | ||
Shear Modulus(G) | 56.76 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 9.323 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.000 | eV | — | ||
| ↳ | 1.600 | eV | — | ||
| ↳ | 0.5580 range 0.000–1.116median of 2 measurements | eV | — | ||
Magnetic Moment(μB)2 entries | 0.000686 | μB | — | ||
| ↳ | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.04320 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -0.2510 | eV/atom | — | ||
| ↳ | 1.500 | eV/atom | — | ||
| ↳ | -1.132 | eV/atom | — |