SnHfOFN

semiconductor

· SnHfOFN

SnHfOFN is an experimental quaternary semiconductor compound combining tin, hafnium, oxygen, fluorine, and nitrogen elements. This material belongs to the emerging class of complex oxide-nitride-fluoride semiconductors being investigated for wide-bandgap and high-κ dielectric applications. While not yet commercialized, compounds in this family are of research interest for next-generation electronic devices requiring improved thermal stability, enhanced dielectric properties, or novel band structure engineering compared to conventional binary or ternary semiconductors.

research and developmentwide-bandgap semiconductorshigh-κ dielectricsadvanced gate materialsthin-film electronicsnext-generation logic devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	9.675e-16	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5200	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SnHfOFN — Properties & Data | MatWorld

SnHfOFN

Electrical Properties

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