SnHfO3

semiconductor

· SnHfO3

SnHfO3 is an experimental mixed-metal oxide semiconductor compound combining tin and hafnium oxides in a perovskite or related crystal structure. This material is primarily of research interest for next-generation electronic and optoelectronic devices, where the combination of tin and hafnium offers potential advantages in band gap engineering, high-κ dielectric properties, and thermal stability compared to single-component oxides. SnHfO3 belongs to the family of complex metal oxides being investigated for advanced semiconductor applications where conventional materials reach performance or integration limits.

Advanced semiconductor researchHigh-κ dielectric layersOptoelectronic devicesThin-film transistorsThermal barrier coatings (research phase)Next-generation IC manufacturing

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?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

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Method

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	4.000	eV	DFT · GLLB-SC
↳	2.398	eV	DFT · PBE
Magnetic Moment(μB)2 entries	0.000	μB	DFT
↳	0.00157	μB	DFT

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)2 entries	-2.783	eV/atom	DFT
↳	0.2000	eV/atom	DFT

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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SnHfO3 — Properties & Data | MatWorld

SnHfO3

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