SnHfO3 is an experimental mixed-metal oxide semiconductor compound combining tin and hafnium oxides in a perovskite or related crystal structure. This material is primarily of research interest for next-generation electronic and optoelectronic devices, where the combination of tin and hafnium offers potential advantages in band gap engineering, high-κ dielectric properties, and thermal stability compared to single-component oxides. SnHfO3 belongs to the family of complex metal oxides being investigated for advanced semiconductor applications where conventional materials reach performance or integration limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.398 | eV | — | ||
| ↳ | 4.000 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | — | ||
| ↳ | 0.00157 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -2.783 | eV/atom | — | ||
| ↳ | 0.2000 | eV/atom | — |