SnGeS₄ is a quaternary chalcogenide ceramic compound combining tin, germanium, and sulfur—a material family of emerging research interest for semiconductor and photonic applications. This is primarily an experimental material studied for its potential in optoelectronic devices, photovoltaics, and infrared optics, where its sulfide-based composition offers tunable bandgap properties and transparency in the infrared spectrum compared to oxide ceramics. Engineers considering this material should recognize it as a laboratory-stage compound rather than a production-ready engineering ceramic, best suited for research into next-generation sensing, imaging, or thin-film device applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1367 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1470 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 14.01 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3041 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.09522 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data