SnBaO3 is a ternary oxide semiconductor compound combining tin and barium elements in a perovskite-related crystal structure. This material is primarily of research interest for emerging applications in photocatalysis, thin-film electronics, and energy conversion, where its band gap and electronic properties are being explored as an alternative to more conventional oxide semiconductors. While not yet widely established in production-scale engineering applications, SnBaO3 represents the broader class of mixed-metal oxides being investigated to replace or complement materials like TiO2 and other metal oxides in environmental remediation and next-generation electronic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.594 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 2.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -2.182 | eV/atom | — | ||
| ↳ | 1.120 | eV/atom | — |