Sn7S2Br10 is a mixed-halide tin sulfide-bromide compound belonging to the family of layered semiconductors with potential optoelectronic properties. This is a research-phase material rather than an established commercial product; compounds in this composition space are investigated for their tunable bandgaps and potential applications in thin-film photovoltaics, photodetectors, and solid-state electronics where conventional semiconductors face limitations. The combination of tin, sulfur, and bromine creates a structure that researchers explore for next-generation devices requiring alternative band structures or improved stability compared to pure halide perovskites.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19.36 | GPa | — | ||
Shear Modulus(G) | 11.01 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.893 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7540 | eV/atom | — |