Sn4I2F6 is an inorganic semiconductor compound containing tin, iodine, and fluorine elements, representing a mixed-halide tin-based material. This compound belongs to the family of halide perovskites and related structures under active research for optoelectronic applications, though it remains largely in the experimental phase rather than established commercial production. The material is of interest for next-generation photovoltaic and light-emission devices where tin-based alternatives to lead-containing semiconductors are sought, offering potential advantages in environmental compatibility and tunable bandgap properties compared to conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.544 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.942 | eV/atom | — |