Sn₂SbS₂I₃ is a mixed-halide chalcogenide semiconductor compound combining tin, antimony, sulfur, and iodine into a layered crystal structure. This is an emerging research material being investigated for next-generation optoelectronic and photovoltaic applications, where the combination of heavy metal cations and mixed anions offers tunable bandgap and potential lead-free alternatives to conventional perovskites. Engineers working in thin-film solar cells, X-ray detectors, or infrared sensing would evaluate this compound for its light-absorption properties and potential stability advantages over fully iodide-based systems, though commercial deployment remains limited to specialized research settings.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.049 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.500 | eV | — | ||
| ↳ | 0.7550 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.04310 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4391 | eV/atom | — |