Sn₂Te₆Tl₈ is an experimental ternary chalcogenide semiconductor compound combining tin, tellurium, and thallium. This material belongs to the family of complex telluride semiconductors under active research for thermoelectric and optoelectronic applications, though it remains primarily in the laboratory development stage rather than established industrial production. The combination of these elements offers potential advantages in thermal-to-electric energy conversion and narrow-bandgap photonic devices, making it of interest where conventional semiconductors face performance or cost limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,375.4 | ksi | — | ||
Shear Modulus(G) | 2,303.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3304 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3130 | eV/atom | — |