Sn₂O₄ is a tin oxide semiconductor compound that exists primarily as a research material within the broader family of metal oxide semiconductors. While not widely deployed in mainstream commercial applications, this material is of interest in emerging electronic and optoelectronic device research due to its semiconducting properties and potential for integration into thin-film technologies. Engineers exploring advanced oxide-based electronics, gas sensing, or photocatalytic applications may encounter this compound as a candidate material, though commercial alternatives like SnO₂ (tin dioxide) remain more established and widely specified.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15,351.4 | ksi | — | ||
Shear Modulus(G) | 7,351.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2346 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.098 | eV/atom | — |