Sn2O2 is a mixed-valence tin oxide semiconductor with potential applications in electronic and optoelectronic devices. This material is primarily studied in research contexts as an alternative tin oxide compound, offering different electronic properties compared to more common tin dioxide (SnO2) due to its unique crystal structure and oxidation state composition. Its semiconductor characteristics make it of interest for applications requiring specific bandgap energies or conductive properties distinct from conventional tin oxide systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,057 | ksi | — | ||
Shear Modulus(G) | 4,677.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5316 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.429 | eV/atom | — |