Sn₂C₄S₄N₄ is an experimental mixed-metal chalcogenide-nitride semiconductor compound containing tin, carbon, sulfur, and nitrogen in a defined stoichiometric ratio. This material represents an emerging class of heteroatom-doped semiconductors being explored in research contexts for next-generation optoelectronic and energy conversion devices, where the combination of multiple anion types (S and N) offers tunable electronic band gaps and enhanced carrier transport compared to single-anion alternatives like binary tin sulfides or nitrides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.479 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.08600 | eV/atom | — |