Sn₁Te₃ is a narrow-bandgap semiconductor compound belonging to the IV-VI class of materials, composed of tin and tellurium in a 1:3 stoichiometric ratio. This material is primarily of research interest for thermoelectric applications and infrared optoelectronics, where its narrow bandgap and carrier mobility characteristics make it relevant for thermal-to-electric conversion devices and mid-infrared detectors operating at cryogenic to room temperatures. While not yet widely commercialized compared to established alternatives like PbTe or Bi₂Te₃, SnTe-based compounds are investigated for enhanced thermoelectric efficiency and tunable optical properties in emerging energy harvesting and sensing systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00590 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1510 | eV/atom | — |