SnTe is a binary IV-VI semiconductor compound composed of tin and tellurium, belonging to the rock-salt crystal structure family of narrow-bandgap semiconductors. This material is primarily investigated in research and emerging applications for thermoelectric devices, infrared detectors, and optoelectronic components, where its direct bandgap and high carrier mobility make it attractive compared to conventional semiconductors like Si or GaAs. SnTe-based compounds are also of interest for topological electronic properties and potential use in advanced quantum device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,742 | ksi | — | ||
Shear Modulus(G) | -1,000.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.06330 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.00300 | eV/atom | — |