Tin diselenide (SnSe₂) is a layered semiconductor compound belonging to the transition metal dichalcogenide family, characterized by a structure consisting of stacked two-dimensional sheets held together by van der Waals forces. While primarily studied in research contexts for next-generation electronics and optoelectronics, SnSe₂ is being investigated for applications requiring tunable bandgap, high electron mobility, and strong light-matter interactions—particularly in thin-film photovoltaics, field-effect transistors, and photodetectors where its layered structure enables novel device engineering not possible with conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,464.7 | ksi | — | ||
Shear Modulus(G) | 3,009.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1131 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3340 | eV/atom | — |