Sn₁Pb₁O₃ is a mixed-metal oxide semiconductor compound containing tin and lead in a perovskite-related crystal structure. This material remains primarily in the research phase, studied for its potential in optoelectronic and photovoltaic applications where lead halide perovskites and their oxide analogs show promise for energy conversion. Unlike widely commercialized perovskites, tin-lead oxide semiconductors are investigated as alternatives with potentially improved stability or tunable bandgap properties, though practical device integration remains limited.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 155.3 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 85.44 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.222 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.507 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data